SI9945BDY Datasheet, PDF (5/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
5
4
3
2
1
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Current Derating*
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Si9945BDY
Vishay Siliconix
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating
100
10
1
0.000001
0.00001
0.0001
0.001
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
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