SI9945BDY Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

New Product
Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
18 ^{VGS = 10 thru 4 V}
16
14
12
10
8
6
4
2
3V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
5
4
3
2
T_C = 125 °C
1
25 °C
0
- 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.080
0.075
0.070
0.065
0.060
V_GS = 4.5 V
0.055
0.050
V_GS = 10 V
0.045
0.040
0 2 4 6 8 10 12 14 16 18 20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1000
800
C_iss
600
400
200
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 30 V
8
I_D = 4.3 A
6
4
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
2.0
1.8
V_GS = 10 V
I_D = 4.3 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
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