SI9945BDY Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

Si9945BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.12
T_J = 150 °C
0.11
10
0.10
0.09
T_J = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.08
0.07
I_D = 4.3 A
0.06
0.05
0.04
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
- 50 - 25
I_D = 250 µA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
25
20
15
10
5
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1
0.1
T_A = 25 °C
0.01
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
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4
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09