SI9945BDY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

New Product
Dual N-Channel 60-V (D-S) MOSFET
Si9945BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
60
0.058 at V_GS = 10 V
0.072 at V_GS = 4.5 V
I_D (A)^a
5.3
4.7
Q_g (Typ.)
13 nC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
APPLICATIONS
• LCD TV CCFL Inverter
• Load Switch
D₁
D₂
G₁
G₂
Top View
Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (10 µs Width)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Avalanche Current
Single-Pulse Avalanche Energy
L = 0 1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
S₁
N-Channel MOSFET
Limit
60
± 20
5.3
4.3
4.3^{b, c}
3.4^{b, c}
20
2.6
1.7^{b, c}
11
6.1
3.1
2
2^{b, c}
1.3^{b, c}
- 55 to 150
S₂
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, d}
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
55
33
Maximum
62.5
40
Unit
°C/W
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
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