SI7113DN-T1-E3 Datasheet, PDF (5/13 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
Si7113DN
Vishay Siliconix
12
9
6
3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
39
1.2
26
0.8
13
0.4
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73770
S-81544-Rev. C, 07-Jul-08
www.vishay.com
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