SI7113DN-T1-E3 Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
2.0
V_GS = 10 thru 4 V
16
1.6
Si7113DN
Vishay Siliconix
12
1.2
8
4
0
0
0.18
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.8
T_C = 125 °C
0.4
25 °C
- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2200
0.16
0.14
0.12
0.10
V_GS = 4.5 V
V_GS = 10 V
0.08
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 4 A
8
V_DS = 25 V
6
V_DS = 75 V
V_DS = 50 V
4
2
0
0
8
16
24
32
40
Q_g - Total Gate Charge (nC)
Gate Charge
1760
C_iss
1320
880
440
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
I_D = 4 A
1.9
1.6
1.3
V_GS = 10 V
V_GS = 4.5 V
1.0
0.7
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73770
S-81544-Rev. C, 07-Jul-08
www.vishay.com
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