SI7113DN-T1-E3 Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

Si7113DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1.0
T_J = 150 °C
25 °C
10
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
I_D = 250 µA
0.4
0.2
I_D = 5 mA
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.8
0.6
0.4
125 °C
0.2
25 °C
0.0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73770
S-81544-Rev. C, 07-Jul-08