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SI7113DN-T1-E3 Datasheet, PDF (1/13 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET
P-Channel 100-V (D-S) MOSFET
Si7113DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
0.134 at VGS = - 10 V
0.145 at VGS = - 4.5V
ID (A)
- 13.2e
- 12.7e
Qg (Typ.)
16.5 nC
PowerPAK 1212-8
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• UIS and Rg Tested
RoHS
COMPLIANT
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies
3.30 mm
S
1
S
3.30 mm
2
S
3
G
4
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7113DN-T1-E3 (Lead (Pb)-free)
Si7113DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 100
V
± 20
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
- 13.2e
- 10.6e
- 3.5a, b
- 2.8a, b
A
- 20
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 13.2e
- 3.0a, b
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11.25
mJ
TC = 25 °C
52
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
33
3.7a, b
W
TA = 70 °C
2.4b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 50 to 150
°C
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73770
S-81544-Rev. C, 07-Jul-08
www.vishay.com
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