SI6552DQ Datasheet, PDF (5/6 Pages) Vishay Siliconix – Dual N- and P-Channel 20-V (D-S) MOSFET

Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
10
V_GS = 8, 7, 6, 5, 4 V
16
8
3V
12
6
P−CHANNEL
Transfer Characteristics
8
2V
4
0
0
0.25
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
2
T_C = 125_C
25_C
- 55_C
0
0
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
1500
Capacitance
0.20
1200
0.15
0.10
V_GS = 2.5 V
V_GS = 4.5 V
0.05
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
8
V_GS = 4.5 V
I_D = 2.5 A
6
Gate Charge
4
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
900
600
300
0
0
C_iss
C_oss
C_rss
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 4.5 V
1.6
I_D = 2.5 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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