SI6552DQ Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N- and P-Channel 20-V (D-S) MOSFET

Si6552DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
- 12
r_DS(on) (W)
0.08 @ V_GS = 4.5 V
0.11 @ V_GS = 2.5 V
0.1 @ V_GS = - 4.5 V
0.18 @ V_GS = - 2.5 V
I_D (A)
"2.8
"2.1
"2.5
"1.9
D₁
S₂
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
Si6552DQ
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
G₁
S₁
N-Channel MOSFET
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"2.8
"2.3
1.0
"8
"20
1.0
0.64
- 55 to 150
- 12
"2.5
"2.0
- 1.0
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
Symbol
R_thJA
N- or P-Channel
125
Unit
_C/W
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