SI6552DQ Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual N- and P-Channel 20-V (D-S) MOSFET

Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
30
20
T_J = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.100
0.090
0.080
T_J = 25_C
0.070
0.060
0.050
I_D = 2.8 A
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V_SD - Source-to-Drain Voltage (V)
0.040
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
Threshold Voltage
1.0
Single Pulse Power
25
20
0.5
15
0.0
I_D = 250 µA
10
- 0.5
5
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001
0.01
0.1
1
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 125_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com
2-4
Document Number: 70175
S-03419—Rev. G, 03-Mar-03