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SI6552DQ Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N- and P-Channel 20-V (D-S) MOSFET
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Si6552DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = - 12 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VDS = - 5 V, VGS = - 4.5 V
VDS = 5 V, VGS = 2.5 V
VDS = - 5 V, VGS = - 2.5 V
VGS = 4.5 V, ID = 2.8 A
VGS = - 4.5 V, ID = 2.5 A
VGS = 2.5 V, ID = 2.1 A
VGS = - 2.5 V, ID = 1.9 A
VDS = 15 V, ID = 2.8 A
VDS = - 9 V, ID = - 2.5 A
IS = 1.0 A, VGS = 0 V
IS = - 1.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 2.8 A
Qgs
P-Channel
VDS = - 6 V, VGS = - 4.5 V, ID = - 2.5 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
N-Channel—IF = 1.0 A, di/dt = 100 A/ms
P-Channel—IF = - 1.0 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
0.6
P-Ch
- 0.6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
10
P-Ch
- 10
N-Ch
4
P-Ch
-4
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
"100
nA
1
-1
mA
5
-5
A
0.08
0.1
W
0.11
0.18
12
S
7
1.2
V
- 1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
16
40
9
20
3
nC
2
6
3
37
60
21
40
66
100
35
70
56
100
ns
43
80
57
100
22
40
26
70
35
70
www.vishay.com
2-2
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
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