SI5948DU Datasheet, PDF (5/9 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
10
Si5948DU
Vishay Siliconix
8
6
Package Limited
6
4
4
2
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating ^a
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating
Note
a. The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1127-Rev. A, 06-Jun-16
5
Document Number: 76424
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