SI5948DU Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.200
Si5948DU
Vishay Siliconix
10
T_J = 150 °C
1
T_J = 25 °C
0.160
0.120
0.080
0.040
I_D = 5 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
1.8
1.6
1.4
I_D = 250 μA
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
25
20
15
10
5
0
0.0001 0.001 0.01 0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
I_D limited
I_DM limited
100 μs
1
1 ms
10 ms
0.1
100 ms
10 s
T_A = 25 °C
1s
BVDSS limited
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
S16-1127-Rev. A, 06-Jun-16
4
Document Number: 76424
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