SI5948DU Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
20
V_GS = 10 V thru 4 V
8
16
Si5948DU
Vishay Siliconix
6
4
V_GS = 3 V
2
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.1200
12
T_C = 25 °C
8
T_C = 125 °C
4
0
0.0
T_C = - 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
250
0.1000
0.0800
V_GS = 4.5 V
200
C_iss
150
0.0600
0.0400
V_GS = 10 V
0.0200
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
8
I_D = 10 A
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 32 V
2
0
0.0
1.0
2.0
3.0
4.0
Q_g - Total Gate Charge (nC)
Gate Charge
100
50
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
I_D = 5 A
V_GS = 10 V
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S16-1127-Rev. A, 06-Jun-16
3
Document Number: 76424
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