SI5948DU Datasheet, PDF (2/9 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET

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Si5948DU
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
Forward Transconductance ^a
Dynamic ^b
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 μA
I_D = 250 μA
V_DS = V_GS, I_D = 250 μA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 40 V, V_GS = 0 V
V_DS = 40 V, V_GS = 0 V, T_J = 55 °C
V_DS  5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5 A
V_GS = 4.5 V, I_D = 3 A
V_DS = 20 V, I_D = 5 A
40
-
-
V
-
45.3
-
mV/°C
-
-4.1
-
1
-
2.5
V
-
-
± 100
nA
-
-
-1
μA
-
-
-10
5
-
-
A
-
0.065 0.082

-
0.074 0.094
-
11
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
-
165
-
V_DS = 20 V, V_GS = 0 V, f = 1 MHz
-
30
-
pF
-
13
-
V_DS = 20 V, V_GS = 10 V, I_D = 10 A
V_DS = 20 V, V_GS = 4.5 V, I_D = 10 A
-
3.3
5
-
1.7
2.6
nC
-
0.53
-
-
0.63
-
f = 1 MHz
1.3
6.5
13

-
5
10
V_DD = 20 V, R_L = 4 
I_D  5 A, V_GEN = 10 V, R_g = 1 
-
25
50
-
7
15
-
10
20
ns
-
11
20
V_DD = 20 V, R_L = 4 
I_D  5 A, V_GEN = 4.5 V, R_g = 1 
-
41
80
-
9
20
-
25
50
Continuous Source-Drain Diode Current
I_S
T_C = 25 °C
-
Pulse Diode Forward Current (t = 100 μs)
I_SM
-
Body Diode Voltage
V_SD
I_S = 5 A, V_GS = 0 V
-
Body Diode Reverse Recovery Time
t_rr
-
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = 5 A, dI/dt = 100 A/μs, T_J = 25 °C
-
-
Reverse Recovery Rise Time
t_b
-
-
5.8
A
-
10
0.9
1.2
V
15
30
ns
8
15
nC
9
-
ns
6
-
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.


Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1127-Rev. A, 06-Jun-16
2
Document Number: 76424
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