SI5922DU Datasheet, PDF (5/7 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si5922DU
Vishay Siliconix
Axis Title
25
10000
20
1000
15
10
Package limited
100
5
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
Note
a. The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1449-Rev. A, 25-Jul-16
5
Document Number: 76056
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000