SI5922DU Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si5922DU
Vishay Siliconix
Axis Title
100
10000
T_J = 150 °C
10
1000
T_J = 25 °C
1
100
0.1
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.06
0.05
Axis Title
I_D = 5 A
10000
0.04
1000
0.03
0.02
0.01
T_J = 150 °C
100
T_J = 25 °C
0
10
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-50 -25
Axis Title
10000
1000
I_D = 250 μA
100
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
Axis Title
100
Limited by R_DS(on) ⁽¹⁾
10000
10
100 μs ¹⁰⁰⁰
1
1 ms
0.1
T_A = 25 °C
Single pulse
0.01
0.1
1
10 ms
100 ms ¹⁰⁰
1s
10 s
DC
10
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area
S16-1449-Rev. A, 25-Jul-16
4
Document Number: 76056
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000