SI5922DU Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si5922DU
Vishay Siliconix
Axis Title
25
V_GS = 10 V thru 4 V
20
10000
15
V_GS = 3 V
1000
10
100
5
0
10
0
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
0.030
Axis Title
10000
0.025
0.020
0.015
V_GS = 4.5 V
V_GS = 6 V
1000
100
V_GS = 10 V
0.010
0
5
10
15
20
I_D - Drain Current (A)
2nd line
10
25
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
Axis Title
V_DS = 15 V
6
V_DS = 7.5 V
V_DS = 24 V
4
2
10000
1000
100
0
10
0
3
6
9
12
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
Axis Title
25
10000
20
1000
15
10
5
0
0
T_C = 25 °C
100
T_C = 125 °C
T_C = -55 °C
1
2
3
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
4
Axis Title
900
C_iss
750
600
C_oss
450
300
150
0
0
C_rss
5
10
15
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10000
1000
100
10
20
1.5
1.4
I_D = 5 A
1.3
1.2
1.1
Axis Title
10000
V_GS = 10 V; 6 V
V_GS = 4.5 V
1000
1.0
100
0.9
0.8
0.7
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-1449-Rev. A, 25-Jul-16
3
Document Number: 76056
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000