SI5920DC Datasheet, PDF (5/7 Pages) Vishay Siliconix – Dual N-Channel 1.5-V (G-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
4
Si5920DC
Vishay Siliconix
8
3
6
2
Package Limited
4
1
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
2
1
Duty Cycle = 0.5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating
0.2
0.1
0.1 _0.05
0.02
0.01
10^-4
Single Pulse
10^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 90 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
*The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73490
S-70914-Rev. C, 07-May-07
www.vishay.com
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