SI5920DC Datasheet, PDF (2/7 Pages) Vishay Siliconix – Dual N-Channel 1.5-V (G-S) MOSFET

Si5920DC
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
8
V
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
8.2
- 2.6
mV/°C
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
0.3
1
V
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 5 V
± 100
ns
Zero Gate Voltage Drain Current
I_DSS
V_DS = 8 V, V_GS = 0 V
V_DS = 8 V, V_GS = 0 V, T_J = 55 °C
1
µA
10
On-State Drain Current^a
I_D(on)
V_DS ≤ 5 V, V_GS = 4.5 V
25
A
V_GS = 4.5 V, I_D = 6.8 A
0.025 0.032
Drain-Source On-State Resistance^a
r_DS(on)
V_GS = 2.5 V, I_D = 6.3 A
V_GS = 1.8 V, I_D = 2.5 A
0.0285 0.036
Ω
0.036 0.045
V_GS = 1.5 V, I_D = 1.8 A
0.041 0.054
Forward Transconductance^a
g_fs
V_DS = 4 V, I_D = 6.8 A
18
S
Dynamic^b
Input Capacitance
C_iss
680
Output Capacitance
C_oss
V_DS = 4 V, V_GS = 0 V, f = 1 MHz
230
pF
Reverse Transfer Capacitance
C_rss
140
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
V_DS = 4 V, V_GS = 5 V, I_D = 6.8 A
Q_gs
V_DS = 4 V, V_GS = 4.5 V, I_D = 6.8 A
Q_gd
8
12
7.3
11
nC
0.84
1.26
Gate Resistance
R_g
f = 1 MHz
1.8
2.7
Ω
Turn-On Delay Time
t_d(on)
8
12
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 4 V, R_L = 0.73 Ω
I_D ≅ 5.5 A, V_GEN = 4.5 V, R_g = 1 Ω
11
17
ns
18
27
Fall Time
t_f
7
11
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
T_C = 25 °C
2.6
A
25
Body Diode Voltage
V_SD
I_S = 2.6 A, V_GS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
t_rr
12
18
ns
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q_rr
t_a
I_F = 2.6 A, di/dt = 100 A/µs, T_J = 25 °C
t_b
3
5
nC
7
ns
5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73490
S-70914-Rev. C, 07-May-07