SI5920DC Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual N-Channel 1.5-V (G-S) MOSFET

Si5920DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10.0
0.06
T_A = 150 °C
T_A = 25 °C
1.0
0.05
T_A = 125 °C
0.04
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp
0.9
I_D = 250 µA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
*Limited by r_DS(on)
10
1
0.03
T_A = 25 °C
0.02
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
r_DS(on) vs. V_GS vs. Temperature
50
40
30
20
10
0
10^-4 10^-3
10^-2 10^-1
1
10
Time (sec)
Single Pulse Power
100 600
10 ms
100 ms
1s
10 s
dc
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4
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
*V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73490
S-70914-Rev. C, 07-May-07