SI5920DC Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual N-Channel 1.5-V (G-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
8
Si5920DC
Vishay Siliconix
20
V_GS = 5 thru 2 V
V_GS = 1.8 V
15
V_GS = 1.5 V
10
5
V_GS = 1 V
0
0.0
1.0
2.0
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.06
V_GS = 1.5 V
0.05
0.04
V_GS = 1.8 V
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.02
0
5
10
15
20
25
30
I_D - Drain Current (A)
r_DS(on) vs. Drain Current
5
I_D = 6.8 A
4
V_DS = 4 V
3
V_DS = 6.4 V
2
1
6
T_C = - 55 °C
4
T_C = 25 °C
T_C = 125 °C
2
0
0.0
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
900
800
C_iss
700
600
500
400
300
C_oss
200
100
C_rss
0
012345678
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
V_GS = 4.5 V, I_D = 5 A
V_GS = 1.5 V, I_D = 1.8 A
1.2
1.0
V_GS = 2.5 V, I_D = 4.8 A
V_GS = 1.8 V, I_D = 2.5 A
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73490
S-70914-Rev. C, 07-May-07
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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