SI5853DC-T1-E3 Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET with Schottky Diode

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
Si5853DC
Vishay Siliconix
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
10
1
0.1
20 V
10 V
0.01
T_J = 150 °C
1
T_J = 25 °C
0.001
0.0001
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
150
0.1
0
0.2
0.4
0.6
0.8
1.0
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
120
90
60
30
Document Number: 71239
S10-0547-Rev. D, 08-Mar-10
0
0
4
8
12
16
20
V_KA - Reverse Voltage (V)
Capacitance
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5