SI5853DC-T1-E3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET with Schottky Diode

Si5853DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
t≤5s
Steady State
Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
R_thJF
Typical
50
77
90
110
30
33
Maximum
60
95
110
130
40
40
Unit
°C/W
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 8 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V, T_J = 85 °C
On-State Drain Current^a
I_D(on)
V_DS ≤ − 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 2.7 A
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = - 2.5 V, I_D = - 2.2 A
V_GS = - 1.8 V, I_D = - 1 A
Forward Transconductance^a
g_fs
V_DS = - 10 V, I_D = - 2.7 A
Diode Forward Voltage^a
Dynamic^b
V_SD
I_S = - 0.9 A, V_GS = 0 V
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 2.7 A
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_g = 6 Ω
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
I_F = - 0.9 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
- 0.45
- 1.0
V
± 100
nA
-1
µA
-5
- 10
A
0.095 0.110
0.137 0.160
Ω
0.205 0.240
7
S
- 0.8
- 1.2
V
5.1
7.7
1.2
nC
1.0
16
25
30
45
30
45
ns
27
40
20
40
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
V_F
I_F = 0.5 A
I_F = 0.5 A, T_J = 125 °C
V_r = 20 V
Maximum Reverse Leakage Current
I_rm
V_r = 20 V, T_J = 85 °C
V_r = 20 V, T_J = 125 °C
Junction Capacitance
C_T
V_r = 10 V
Min.
Typ.
Max.
Unit
0.42
0.48
V
0.33
0.4
0.002 0.100
0.10
1
mA
1.5
10
31
pF
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Document Number: 71239
S10-0547-Rev. D, 08-Mar-10