SI5853DC-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET with Schottky Diode

Si5853DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.4
0.3
T_J = 150 °C
0.2
T_J = 25 °C
0.1
I_D = 2.7 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
I_D = 250 µA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10^-4 10^-3
10^-2 10^-1
1
10
Time (s)
Single Pulse Power
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 90 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 71239
S10-0547-Rev. D, 08-Mar-10