SI5499DC Datasheet, PDF (5/8 Pages) Vishay Siliconix – P-Channel 1.5-V (G-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
T_J = 150 °C
10
T_J = 25 °C
0.08
0.06
T_A = 25 °C
0.04
Si5499DC
Vishay Siliconix
I_D = 5.1 A
T_A = 125 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.7
0.02
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.6
40
I_D = 250 µA
0.5
30
0.4
20
0.3
10
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by r_DS(on)*
10
1
0.1
T_A = 25 °C
Single Pulse
0
0.001 0.01
0.1
1
10 100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
www.vishay.com
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