SI5499DC Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 1.5-V (G-S) MOSFET

New Product
P-Channel 1.5-V (G-S) MOSFET
Si5499DC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.036 at V_GS = - 4.5 V
-8
0.045 at V_GS = - 2.5 V
0.056 at V_GS = - 1.8 V
0.077 at V_GS = - 1.5 V
I_D (A)^e
-6
-6
-6
-6
Q_g (Typ.)
14 nC
1206-8 ChipFET^®
1
D
D
D
D
D
Marking Code
D
G
S
BP XXX
Lot Traceability
and Date Code
Part #
Code
Bottom View
Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFET: 1.5 V Rated
• Ultra-Low On-Resistance
APPLICATIONS
RoHS
COMPLIANT
• Load Switch for Portable Devices
- Guaranteed Operation at VGS = 1.5 V Critical for
Optimized Design and Longer Battery Life
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V
V_GS
±5
T_C = 25 °C
- 6^e
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
- 6^e
- 6^{a, b, e}
T_A = 70 °C
- 5.6^{a, b}
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
- 25
Continuous Source-Drain Diode Current^{a, b}
T_C = 25 °C
T_A = 25 °C
I_S
- 5.2
- 2.1^{a, b}
T_C = 25 °C
6.2
Maximum Power Dissipation^{a, b}
T_C = 70 °C
4
T_A = 25 °C
P_D
2.5^{a, b}
W
T_A = 70 °C
1.6^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 55 to 150
°C
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
www.vishay.com
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