SI5499DC Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 1.5-V (G-S) MOSFET

Si5499DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
10
V_GS = 5 thru 2.5 V
2V
20
8
15
6
10
1.5 V
5
1V
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.09
V_GS = 1.5 V
0.08
0.07
V_GS = 1.8 V
0.06
0.05
V_GS = 2.5 V
0.04
0.03
V_GS = 4.5 V
0.02
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
7
I_D = 6 A
6
5
V_DS = 4 V
4
V_DS = 5.6 V
3
2
1
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
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4
4
2
0
0.0
2000
T_C = 125 °C
25 °C
- 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
C_iss
1200
800
400
C_rss
C_oss
0
012345678
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
V_GS = 4.5 V
I_D = 5.1 A
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73321
S-80193-Rev. B, 04-Feb-08