SI5499DC Datasheet, PDF (2/8 Pages) Vishay Siliconix – P-Channel 1.5-V (G-S) MOSFET

Si5499DC
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. Maximum under Steady State conditions is 95 °C/W.
Symbol
R_thJA
R_thJF
Typical
48
17
Maximum
50
20
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = - 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = - 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
V_DS = V_GS, I_D = - 5 mA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 5 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 8 V, V_GS = 0 V
V_DS = - 8 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS ≤ 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 5.1 A
Drain-Source On-State Resistance^a
r_DS(on)
V_GS = - 2.5 V, I_D = - 4.6 A
V_GS = - 1.8 V, I_D = - 4.3 A
V_GS = - 1.5 V, I_D = - 1.3 A
Forward Transconductance^a
g_fs
V_DS = - 4 V, I_D = - 5.1 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = - 4 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = - 4 V, V_GS = - 8 V, I_D = - 6 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = - 4 V, V_GS = - 4.5 V, I_D = - 6 A
f = 1 MHz
V_DD = - 4 V, R_L = 0.7 Ω
I_D ≅ - 5.6 A, V_GEN = - 4.5 V, R_g = 1 Ω
V_DD = - 4 V, R_L = 0.7 Ω
I_D ≅ - 5.6 A, V_GEN = - 8 V, R_g = 1 Ω
Min.
-8
- 0.35
- 25
Typ.
6
2.3
- 0.55
0.030
0.037
0.046
0.057
18
1290
420
270
23
14
1.7
2.7
8
10
70
60
30
8
70
55
55
Max.
- 0.8
± 100
-1
- 10
0.036
0.045
0.056
0.077
35
21
15
110
90
45
15
110
85
85
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
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Document Number: 73321
S-80193-Rev. B, 04-Feb-08