SI5448DU Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
60
10000
45
30
Package limited
15
1000
100
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
Si5448DU
Vishay Siliconix
Axis Title
40
10000
Axis Title
1.8
10000
30
1.35
1000
1000
20
0.9
100
100
10
0.45
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0
10
0
25 50 75 100 125 150
T_A - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation P_D is based on T_J max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2343-Rev. A, 14-Nov-16
5
Document Number: 76149
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000