SI5448DU Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si5448DU
Vishay Siliconix
Axis Title
100
10000
10
1
0.1
0.01
T_J = 150 °C
T_J = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.030
Axis Title
10000
0.025
0.020
1000
0.015
0.010
T_J = 150 °C
100
0.005
T_J = 25 °C
0
10
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.0
10000
I_D = 250 μA
1.7
1000
1.4
100
1.1
0.8
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
1000
Axis Title
10000
I_DM limited
100
Limited by R_DS(on) ⁽¹⁾
10
100 μs 1000
1 ms
1
10 ms
100
100 ms
0.1
T_A = 25 °C
Single pulse
0.01
0.1
1
BVDSS limited
10
10 s, 1 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
S16-2343-Rev. A, 14-Nov-16
4
Document Number: 76149
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