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SI5448DU Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si5448DU
Vishay Siliconix
Axis Title
100
VGS = 10 V thru 4 V
80
60
10000
1000
40
VGS = 3 V
100
20
0
10
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
100
10000
80
60
40
20
0
0
TC = 25 °C
TC = 125 °C
TC = -55 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
5
0.015
Axis Title
10000
0.012
0.009
VGS = 4.5 V
1000
0.006
0.003
VGS = 10 V
100
0
10
0
20
40
60
80
100
ID - Drain Current (A)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
2100
1680
1260
Axis Title
10000
Ciss
1000
840
Coss
420
Crss
0
0
5
10
15
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
20
10
ID = 16 A
8
Axis Title
VDS = 20 V
6
VDS = 10 V
4
VDS = 32 V
2
0
0
7
14
21
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
28
Axis Title
1.7
10000
VGS = 10 V, ID = 15 A
1.5
1000
1.3
VGS = 4.5 V, 10 A
1.1
100
0.9
0.7
-50
10
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-2343-Rev. A, 14-Nov-16
3
Document Number: 76149
For technical questions, contact: pmostechsupport@vishay.com
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