SI4946BEY Datasheet, PDF (5/7 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 ˚C MOSFET

New Product
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating*
8
4.0
7
3.5
6
3.0
5
2.5
4
3
2
1
0
0
25 50 75 100 125 150 175
T_C − Case Temperature (_C)
2.0
1.5
1.0
0.5
0.0
25
Power, Junction-to-Case
50
75
100 125 150 175
T_C − Case Temperature (_C)
Single Pulse Avalanche Capability
100
10
T_A
+
L@
BV *
I_D
V_DD
1
0.000001
0.00001
0.0001
T_A − Time In Avalanche (sec)
0.001
*The power dissipation P_D is based on T_J(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73411
S-51013—Rev. A, 23-May-05
www.vishay.com
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