SI4946BEY Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 ˚C MOSFET

Si4946BEY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
10
T_J = 175_C
On-Resistance vs. Gate-to-Source Voltage
0.10
I_D = 5.3 A
0.08
T_J = 150_C
0.06
T_J = 25_C
0.04
T_J = 25_C
0.02
1
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Threshold Voltage
3.0
Single Pulse Power, Junction-to-Ambient
25
2.8
20
2.6
I_D = 250 mA
2.4
15
2.2
2.0
10
1.8
1.6
5
1.4
1.2
−50 −25
0 25 50 75 100 125 150 175
T_J − Temperature (_C)
0
0.01
0.1
Safe Operating Area, Junction-to-Ambient
100
1
10
Time (sec)
100
1000
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4
10
*Limited by r_DS(on)
100 ms
1
1 ms
10 ms
0.1
T_A = 25_C
Single Pulse
100 ms
1s
10 s
dc
0.01
0.01
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Document Number: 73411
S-51013—Rev. A, 23-May-05