SI4946BEY Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 ˚C MOSFET

New Product
Si4946BEY
Vishay Siliconix
Dual N-Channel 60-V (D-S) 175 _C MOSFET
PRODUCT SUMMARY
V_DS (V)
60
r_DS(on) (W)
0.041 @ V_GS = 10 V
0.052 @ V_GS = 4.5 V
I_D (A)
6.5
5.8
Q_g (Typ)
9.2 nC
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% R_g Tested
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Ordering Information: Si4946BEY-T1—E3 (Lead (Pb)-Free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
T_C = 25_C
T_A = 25_C
L = 0.1 mH
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
60
"20
6.5
5.5
5.3^{a, b}
4.4^{a, b}
30
3.1
2^{a, b}
12
7.2
3.7
2.6
2.4^{a, b}
1.7^{a, b}
−50 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
t p 10 sec
Steady State
Symbol
R_thJA
R_thJF
Typical
50
33
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. t = 10 sec
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under steady state conditions is 110 _C/W.
Document Number: 73411
S-51013—Rev. A, 23-May-05
Maximum
62.5
41
Unit
_C/W
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