SI4946BEY Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 ˚C MOSFET

New Product
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 10 thru 5 V
25
20
4V
15
10
5
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
10
8
6
4
T_C = 150_C
−55_C
2
25_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.100
1200
Capacitance
0.080
0.060
0.040
V_GS = 4.5 V
0.020
V_GS = 10 V
0.000
0
5
10
15
20
25
30
I_D − Drain Current (A)
Gate Charge
10
I_D = 5.3 A
8
V_DS = 30 V
6
V_DS = 48 V
4
2
0
0
4
8
12
16
20
Q_g − Total Gate Charge (nC)
Document Number: 73411
S-51013—Rev. A, 23-May-05
1000
C_iss
800
600
400
200
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
2.0 I_D = 5.3 A
1.8
1.6
V_GS = 10 V
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0.6
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
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