SI4884BDY Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating*
20
16
12
8
4
0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
Si4884BDY
Vishay Siliconix
Power, Junction-to-Foot
5.5
4.4
3.3
2.2
1.1
0.0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
Power, Junction-to-Ambient
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
*The power dissipation P_D is based on T_J(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
www.vishay.com
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