SI4884BDY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si4884BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 10 thru 4 V
40
30
20
10
0
0.0
3V
0.3
0.6
0.9
1.2
1.5
V_DS – Drain-to-Source Voltage (V)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
On-Resistance vs. Drain Current and Gate Voltage
0.014
2000
0.012
1600
Transfer Characteristics
T_C = 125_C
25_C
1.4
1.8
2.2
2.6
V_GS – Gate-to-Source Voltage (V)
Capacitance
–55_C
3.0
C_iss
0.010
0.008
V_GS = 4.5 V
V_GS = 10 V
1200
800
0.006
0.004
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
10
I_D = 12 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
400
C_rss
C_oss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
I_D = 10 A
1.4
1.2
1.0
2
0.8
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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