SI4884BDY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4884BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
10
T_J = 150_C
On-Resistance vs. Gate-to-Source Voltage
0.05
I_D = 10 A
0.04
1
0.03
0.1
0.01
T_J = 25_C
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
0.02
0.01
T_J = 25_C
T_J = 125_C
0.00
2
3 4 5 6 7 8 9 10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6
Single Pulse Power, Junction-to-Ambient
100
0.3
80
I_D = 250 mA
0.0
60
–0.3
40
–0.6
20
–0.9
–50 –25 0
25 50 75 100 125 150
0
0.001
0.01
0.1
1
10
T_J – Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
*Limited by r_DS(on)
10
1 ms
1
10 ms
100 ms
1s
0.1
10 s
T_A = 25_C
Single Pulse
dc
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
www.vishay.com
4
Document Number: 73454
S–51450—Rev. A, 01-Aug-05