SI4884BDY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si4884BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0090 @ V_GS = 10 V
0.012 @ V_GS = 4.5 V
I_D (A)^a
16.5
13.2
Q_g (Typ)
10.5 nC
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
RoHS
COMPLIANT
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4884BDY-T1—E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
T_C = 25_C
T_A = 25_C
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
16.5
13.2
12.4^{b, c}
10.0^{b, c}
50
4.0
2.3^{b, c}
4.45
2.85
2.50^{b, c}
1.6^{b, c}
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 85 _C/W.
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
t p 10 sec
Steady State
Symbol
R_thJA
R_thJF
Typical
40
22
Maximum
50
28
Unit
_C/W
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