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SI4854DY Datasheet, PDF (5/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
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New Product
Si4854DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
MOSFET
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10â4
10â3
10â2
10â1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
10
10
1
1
10
SCHOTTKY
Forward Voltage Drop
TJ = 150_C
0.1
30 V
24 V
0.01
TJ = 25_C
0.001
0.0001
0
200
25
50
75
100 125 150
TJ â Temperature (_C)
Capacitance
1
0.0
0.3
0.6
0.9
1.2
1.5
VF â Forward Voltage Drop (V)
160
120
80
Coss
40
0
0
6
12
18
24
30
VDS â Drain-to-Source Voltage (V)
Document Number: 71444
S-03476âRev. A, 16-Apr-01
www.vishay.com
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