SI4854DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4854DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 85_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 6.9 A
V_GS = 4.5 V, I_D = 6.4 A
V_GS = 2.5 V, I_D = 5.5 A
V_DS = 15 V, I_D = 6.9 A
I_S = 1 A, V_GS = 0 V
0.6
Ch-1
Ch-2
Ch-1
Ch-2
20
Ch-1
Ch-2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 4.5 V, I_D = 6.9 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
Ch-1
Ch-2
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typ^a
0.021
0.024
0.034
22
0.7
0.47
9
2.1
2.6
20
20
35
10
40
32
Max Unit
V
"100
nA
1
100
mA
15
2000
A
0.026
0.030
W
0.041
S
1.2
V
0.5
14
nC
30
30
55
ns
20
80
70
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 1.0 A
I_F = 1.0 A, T_J = 125_C
V_r = 30 V
V_r = 30 V, T_J = 100_C
V_r = –30 V, T_J = 125_C
V_r = 10 V
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
mA
pF
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Document Number: 71444
S-03476—Rev. A, 16-Apr-01