SI4854DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4854DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 3 V
24
24
MOSFET
Transfer Characteristics
18
18
12
2V
6
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
0.075
On-Resistance vs. Drain Current
12
T_C = 125_C
6
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
1500
Capacitance
0.060
0.045
0.030
V_GS = 2.5 V
0.015
V_GS = 4.5 V
V_GS = 10 V
0.000
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 6.9 A
8
6
4
2
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
1200
C_iss
900
600
300
C_rss
C_oss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 6.9 A
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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