SI4854DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4854DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
0.08
I_D = 6.9 A
0.06
T_J = 25_C
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0.00
0
50
40
30
20
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
10
0
10^–3
10^–2
10^–1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 93_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71444
S-03476—Rev. A, 16-Apr-01