SI4832DY Datasheet, PDF (5/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4832DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 80_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 71774
S-31062—Rev. F, 26-May-03
www.vishay.com
5