SI4832DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4832DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
V_GS = 10 thru 5 V
40
40
4V
30
30
Transfer Characteristics
20
10
0
0
0.10
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08
0.06
0.04
0.02
0.00
0
10
8
V_GS = 4.5 V
V_GS = 10 V
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
V_DS = 15 V
I_D = 9 A
20
T_C = 125_C
10
25_C
- 55_C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
1800
Capacitance
1500
C_iss
1200
900
C_oss
600
C_rss
300
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 9 A
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 71774
S-31062—Rev. F, 26-May-03
www.vishay.com
3