SI4832DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4832DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.018 @ V_GS = 10 V
0.028 @ V_GS = 4.5 V
I_D (A)
9
7.3
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.53 V @ 3.0 A
I_F (A)
4.0
D
SO-8
S1
S2
S3
G4
Top View
8D
Ordering Information:
7D
Si4832DY
6 ^D Si4832DY-T1 (with Tape and Reel)
5D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
10 sec
Steady State
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
30
V_DS
30
Gate-Source Voltage (MOSFET)
V_GS
"20
Continuous Drain Current (T_J = 150_C) (MOSFET)a^{, b}
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a^{, b}
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^{a b}
Maximum Power Dissipation (Schottky)^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
9
6.9
7.5
5.6
50
2.1
1.2
4.0
2.3
50
2.5
1.4
1.6
0.9
2.0
1.2
1.3
0.8
- 55 to 150
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Maximum Junction-to-Ambient (t v 10 sec)^a
Maximum Junction-to-Ambient (t = steady state)^a
MOSFET
Schottky
MOSFET
Schottky
R_thJA
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71774
S-31062—Rev. F, 26-May-03
Typical
40
50
70
80
Maximum
50
60
90
100
Unit
_C/W
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