SI4832DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4832DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.10
On-Resistance vs. Gate-to-Source Voltage
10
T_J = 150_C
T_J = 25_C
0.08
0.06
I_D = 9.0 A
1
0.04
0.02
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Reverse Current (Schottky)
30
10
1
0.1
0.01
0.001
30 V
10 V
20 V
0.00
0
50
40
30
20
10
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power (MOSFET)
0.0001
0
25
50
75
100 125 150
T_J - Junction Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
2
1
Duty Cycle = 0.5
100 600
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71774
S-31062—Rev. F, 26-May-03