English
Language : 

SI4830ADY-T1-E3 Datasheet, PDF (5/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
◁
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si4830ADY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
Notes:
P DM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 93 °C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72021
S09-0868-Rev. G, 18-May-09
www.vishay.com
5
 ▷